Infineon Technologies has launched the 600V CoolMOS P7 and 600V CoolMOS C7 Gold (G7) series.

Designed with 600V voltage rating, these products deliver enhanced MOSFET performance and achieve high power density.

The P7 product features ease of design and excellent cost performance. It is suitable for applications such as chargers, adapters, lighting, TVs, PC power supplies, solar, servers, telecommunications, and EV charging. The 600V CoolMOS P7 supports power capacities from 100W to 15kW. It achieves up to 1.5% efficiency improvement across various topologies. According to Infineon representatives, it offers thermal advantages of up to 4.2°C compared to competing products.

Surface-mount (SMD) and through-hole packages provide R_DS(on) from 37mΩ to 600mΩ, enabling use across various applications and power levels. ESD protection of 2kV (HBM) and above protects the device from electrostatic discharge damage during manufacturing, enhancing production quality. The body diode protects the device during hard-switching rectification intervals in LLC circuits.

The G7 series features lower R_DS(on), reduced gate charge Q_G, lowered energy stored in output capacitance, and provides 4-pin Kelvin source functionality with the TO-Leadless package. Therefore, it minimizes losses in PFC and LLC circuits, achieving 0.6% performance improvement in PFC circuits and higher efficiency at full load. Additionally, it further improves efficiency with parasitic source inductance as low as 1nH.

The improved thermal characteristics of the TO-Leadless package enable higher current handling, and the SMD package reduces assembly costs. The 600V CoolMOS C7 Gold also features R_DS(on) as low as 28mΩ to 150mΩ, among the lowest in the industry. Compared to the conventional D²PAK, it reduces footprint by 30%, height by 50%, and space by 60%. It achieves high efficiency and power density in server, telecommunications, industrial, and solar applications.