Samsung Electronics, 10% performance improvement and 15% power efficiency improvement compared to 1st generation process
Expansion of 10-nano production equipment at Hwaseong S3 line by Q4 2017

Samsung Electronics announced the completion of development of a 10-nano 2nd generation FinFET process (10LPP) with enhanced performance and low-power characteristics.

Samsung's completed 10-nano 2nd generation process (10LPP, Low Power Plus) achieves 10% and 15% improvements in performance and power efficiency, respectively, compared to the existing 1st generation process (10LPE).

Through the 10-nano 2nd generation process with improved performance and power efficiency, Samsung Electronics plans to diversify its foundry customers and expand applications in computing, wearables, IoT, and networking.
Samsung Electronics' 10-nano process-based mobile AP is currently being equipped in Galaxy S8.

In addition, Samsung Electronics plans to expand 10-nano production equipment at the S3 line located at the Hwaseong campus by Q4 2017 in preparation for increased 10-nano foundry demand, thereby establishing a more stable mass production system.

Lee Sang-hyun, senior executive of Samsung Electronics Foundry Marketing Team, stated, "The successful mass production of the 10-nano 1st generation process and customer acquisition have proven Samsung Electronics' 10-nano process excellence and process leadership," and added, "The 2nd generation process will also provide differentiated solutions to customers in various fields including mobile, computing, and networking."

Samsung Electronics has been leading the 10-nano market by applying the 10-nano FinFET process (1st generation), which achieved mass production success first in the industry in October 2016, to the mass production of premium mobile APs such as Samsung Electronics' 'Exynos 9' and Qualcomm's 'Snapdragon 835'.