OBC provides benefits even at charging stations for PHE/EV
Suitable for high-power industrial applications, motor drives, UPS, and solar inverters

STMicroelectronics (hereinafter ST) has released a 1200V SiC JBS (Junction Barrier Schottky) diode with a range of 2A to 40A that enables a wider range of applications by utilizing the high switching efficiency, fast recovery, and consistent temperature characteristics of SiC (Silicon-Carbide) technology.

ST's SiC diode manufacturing process enables the realization of highly robust devices with best-in-class forward voltage (lowest _VF ), allowing for the use of diodes with lower current ratings to achieve high efficiency and reliability while reducing costs. This increases the applicability of SiC technology in cost-sensitive applications such as solar inverters, industrial motor drives, home appliances, and power adapters.

Applications requiring excellent efficiency, low weight, small size, and excellent thermal characteristics can also extend these advantages by using ST's latest 1200V SiC diodes. The high efficiency margin provided by the low forward voltage drop (V _F ) also offers advantages to automotive equipment such as On-Board Battery Chargers (OBCs) and charging stations for Plug-In Hybrid or Electric Vehicles (PHE/EVs).

In addition, it provides robust overall electrical performance, making it suitable for use in telecommunications and server power supplies, high-power industrial SMPS (Switched-Mode Power Supplies) and motor drives, UPS (Uninterruptible Power Supplies), and large-scale solar inverters.

By maximizing SiC efficiency and achieving the lowest V _F , operating temperatures can be lowered and application life extended. ST's manufacturing process allows for lower V _F values guaranteed in datasheets, ensuring reproducibility for OEMs when implementing circuits in large quantities.