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Samsung Electronics Expands Premium Market Through Mass Production of D-RAM for AI Systems
Adoption expanding in networks and graphics card markets following supercomputers (HPC)
Providing optimal solutions including 'high capacity, ultra-high speed,·and ultra-low power consumption' for next-generation systems
Samsung Electronics is rapidly increasing production volumes of 8GB High Bandwidth Memory (HBM2) D-RAM, expanding supply not only to the supercomputer (HPC) market but also to network and graphics card markets. Samsung Electronics began mass production of 8GB HBM2 D-RAM in June of last year, pioneering the memory market for supercomputers utilized in artificial intelligence (AI) services, and has subsequently expanded the application scope of premium D-RAM to the existing high-end graphics card market.
The 8GB HBM2 D-RAM enables data transmission at 256GB per second, 8 times faster than the transmission speed (32GB/s) of existing graphics D-RAM (8Gb GDDR5, 8Gbps). This incorporates over 850 key patents including Samsung Electronics' 'ultra-high-density TSV design' and 'thermal management technology,' providing customers with optimal solutions including high capacity, ultra-high speed, and ultra-low power consumption for next-generation systems.

This product features a structure in which eight 8Gb HBM2 D-RAM chips (based on 20-nanometer process) are stacked on a single buffer chip, with over 5,000 fine holes drilled in each chip and vertically connected via over 40,000 'TSV bonding balls' using 'ultra-high-density TSV design technology.'
Particularly, when processing large volumes of information, if data transfer is delayed in some TSVs, the path is switched to alternate TSVs to prevent performance degradation and maintain optimal performance.
Samsung Electronics also developed and applied 'thermal management technology' that prevents specific areas of the chip from rising above the limit temperature during high-speed operation, thereby securing high levels of reliability.
Additionally, by providing twice the capacity in the same size as 4GB HBM2 D-RAM, it has contributed to overcoming performance limitations in artificial intelligence systems, and has approximately doubled the power consumption efficiency of next-generation systems.
Han Jae-soo, Senior Vice President of the Strategic Marketing Team at Samsung Electronics Memory Business Division, stated, "By expanding supply of 8GB HBM2 D-RAM, the only product being mass-produced in the industry, we have contributed to enabling customers to launch next-generation systems in a timely manner," and emphasized, "We will strengthen business cooperation with various global customers through the launch of next-generation HBM2 D-RAM product lineups in the future."
Samsung Electronics plans to expand mass production volumes of 8GB HBM2 products within the HBM2 product line to meet global IT customer requirements, increasing its proportion to over 50% in the first half of next year, and actively responding to premium D-RAM market demand.
Providing optimal solutions including 'high capacity, ultra-high speed,·and ultra-low power consumption' for next-generation systems
Samsung Electronics is rapidly increasing production volumes of 8GB High Bandwidth Memory (HBM2) D-RAM, expanding supply not only to the supercomputer (HPC) market but also to network and graphics card markets. Samsung Electronics began mass production of 8GB HBM2 D-RAM in June of last year, pioneering the memory market for supercomputers utilized in artificial intelligence (AI) services, and has subsequently expanded the application scope of premium D-RAM to the existing high-end graphics card market.
The 8GB HBM2 D-RAM enables data transmission at 256GB per second, 8 times faster than the transmission speed (32GB/s) of existing graphics D-RAM (8Gb GDDR5, 8Gbps). This incorporates over 850 key patents including Samsung Electronics' 'ultra-high-density TSV design' and 'thermal management technology,' providing customers with optimal solutions including high capacity, ultra-high speed, and ultra-low power consumption for next-generation systems.
This product features a structure in which eight 8Gb HBM2 D-RAM chips (based on 20-nanometer process) are stacked on a single buffer chip, with over 5,000 fine holes drilled in each chip and vertically connected via over 40,000 'TSV bonding balls' using 'ultra-high-density TSV design technology.'
Particularly, when processing large volumes of information, if data transfer is delayed in some TSVs, the path is switched to alternate TSVs to prevent performance degradation and maintain optimal performance.
Samsung Electronics also developed and applied 'thermal management technology' that prevents specific areas of the chip from rising above the limit temperature during high-speed operation, thereby securing high levels of reliability.
Additionally, by providing twice the capacity in the same size as 4GB HBM2 D-RAM, it has contributed to overcoming performance limitations in artificial intelligence systems, and has approximately doubled the power consumption efficiency of next-generation systems.
Han Jae-soo, Senior Vice President of the Strategic Marketing Team at Samsung Electronics Memory Business Division, stated, "By expanding supply of 8GB HBM2 D-RAM, the only product being mass-produced in the industry, we have contributed to enabling customers to launch next-generation systems in a timely manner," and emphasized, "We will strengthen business cooperation with various global customers through the launch of next-generation HBM2 D-RAM product lineups in the future."
Samsung Electronics plans to expand mass production volumes of 8GB HBM2 products within the HBM2 product line to meet global IT customer requirements, increasing its proportion to over 50% in the first half of next year, and actively responding to premium D-RAM market demand.
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