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New world record in high-efficiency power management

Google 우선 소스Published2012.01.30 13:36

- New product added to the latest superjunction technology MDmesh™ V power MOSFET family
- Achieved a groundbreaking record in thermal efficiency reduction for power converters used in consumer electronics and solar power

January 30, 2012, Seoul — STMicroelectronics (NYSE:STM), a global semiconductor company for various electronic applications, announced that it has set a new world record in high-voltage power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) with a new addition to its MDmesh V family. STMicroelectronics’ MDmesh V family, already an industry leader, delivers the lowest on-resistance per unit area, achieving the highest efficiency and power density at 650 V, and improves key efficiency metrics by more than 23%. This saves energy by reducing heat loss in power conversion circuits used in systems such as electronic lighting control, power supply for consumer electronics, and solar converters.

Maurizio Giudice, Marketing Director of ST’s Power Transistor business unit, stated, “ST has set a new record in the superjunction MOSFET sector with its outstanding technology. MDmesh V is the latest technology among ST’s proven Multi-Drain Mesh technologies,” adding, “With enhanced performance, it has reduced energy consumption in consumer applications, and through such innovative product development and design, ST is creating environmentally friendly products that deliver exceptional performance.”

The recently released STW88N65M5 MDmesh V MOSFET achieves the industry's lowest on-state resistance of 0.029 Ohms in a 650V-class device in a standard TO-247 package. This is an improvement over the previous industry record of 0.038 Ohms set by ST with an MDmesh V device. Application designers can improve energy efficiency by replacing high-resistance MOSFETs or reducing the number of devices installed in parallel, while also reducing assembly size and component costs.

ST's 650V-class STW88N65M5 and other MDmesh V devices provide a larger safety margin than competitors' 600V-class devices. The MOSFETs are now able to withstand voltage surges that typically occur in AC power lines.

ST's MDmesh V technology, which has already proven its performance in the market, is available in various packages including Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV, and I2PAK.

The new STW88N65M5 is available for immediate purchase in a TO-247 package and is priced at $20 per unit for orders of 1,000.

More information can be found at www.st.com/mdmeshv .

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