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ADI Launches GaN Power Amplifier with Maximum Power Density Level

Google 우선 소스Published2017.08.24 18:06
Operates at frequencies of 2GHz to 6GHz for military, aerial surveillance, radar, etc.

Analog Devices (ADI) has released two high-performance gallium nitride (GaN) power amplifier modules.

This product boasts the highest power density level compared to power amplifiers in its class, thereby minimizing the size and weight of the subsystem. The two broadband modules introduced this time, the HMC7885 and HMC7748, were developed for applications operating in the 2GHz to 6GHz frequency range, including test and measurement, communications, Traveling Wave Tube (TWT) replacement, military/aviation surveillance and response, and radar.

With this fully integrated and all-solid-state product, ADI has expanded its existing GaN-based power amplifier family, enabling designers to reduce prototyping and system design time through ease of use.

The HMC7885 is a 32W hermetic hybrid amplifier in a flanged package, suitable for applications requiring high reliability. This hybrid amplifier typically provides a small-signal gain of 21dB and an RF output of 45dBm. A standby current of 2.2A is required from a 28V DC power supply, and DC blocking capacitors are included at the input and output terminals to facilitate use of both RF input and output, and are matched with a 50Ω impedance.


The HMC7748 is a modular multi-stage power amplifier that provides 25W output and 60dB small-signal gain, and accepts inputs up to -8dBm. This amplifier includes a bias sequence adjustment circuit and has an internal 50Ω resistor connected. It also requires 0.7A of current from a 12V power supply and up to 4A of current from a 28V power supply. Additionally, the amplifier can be turned on and off without manipulating the power supply, as operation can be disabled using the included enable pin.
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