950V high-voltage MOSFET launched to meet demand
Low V _GS(th) tolerance, easy MOSFET design
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today launched the new 950 V CoolMOS P7 superjunction MOSFET, addressing the growing market demand for high-voltage MOSFETs for high-power density, low-power SMPS designs.

This product meets the design requirements of lighting, smart meters, mobile chargers, laptop adapters, auxiliary power supplies, and industrial SMPS applications. The 950V CoolMOS P7 offers superior thermal performance and efficiency, while reducing bill of materials (BOM) and system costs.

The 950V CoolMOS P7 DPAK product boasts superior R _DS(on) for higher-density designs. Its superior V _GS(th) and low V _GS(th) tolerance facilitate MOSFET drive and design. Like other members of the P7 family, it also integrates Zener diode ESD protection. This increases assembly yields, reduces costs, and reduces ESD-related production issues.

Additionally, the 950V CoolMOS P7 products enable efficient designs with up to 1% higher efficiency and 2°C to 10°C lower MOSFET temperatures. They also reduce switching losses by up to 58% compared to previous-generation CoolMOS products.

The 950V CoolMOS P7 products are available in TO-220 FullPAK, TO-251 IPAK LL, TO-252 DPAK, and SOT-223 packages, enabling a transition from THD to SMD products.