June 26, 2012, Seoul, Korea – Freescale Semiconductor (NYSE: FSL www.freescale.com ), a leader in the base station RF power transistor market, has launched new Airfast™ transistors designed to increase efficiency, peak power, and signal bandwidth for next-generation base stations. With the addition of these new products, Freescale’s flagship Airfast RF power product family now features at least one solution for each mobile phone band and supports the entire spectrum of small and large base stations.
Airfast RF power solutions, which are cost-effective and small-configurable, help network equipment manufacturers and operators support multiple wireless standards, manage fast data transmission speeds, and keep capital and operating costs low.

A new type of control product called ADAM (Advanced Doherty Alignment Module) is also being announced, which optimizes existing Doherty power amplifiers with real-time control capabilities. This module is designed to work with Airfast devices to enhance overall system performance, including power efficiency, output, and frequency band linearity.
"The recent addition to Freescale's Airfast RF power solution portfolio provides a new level of linear efficiency and power to small cell and macrocell base stations," said Ritu Favre, Vice President and General Manager of Freescale's RF Business Unit. "Freescale has long maintained its position as a leader in this market and, as a pioneer of LDMOS technology, provides a wide range of RF transistors that improve power amplification performance while reducing costs and design cycles," he said.
Product Details
The AFT09S282N is Freescale's 900MHz, 28V LDMOS product. This device provides advanced RF performance from 720 to 960MHz and offers the highest peak power (490W load full peak power) among OMNI plastic overmolded packages on the market.
The AFT18S230S is a 1.8 GHz, 28 V RF power LDMOS transistor that provides 45 percent symmetric Doherty efficiency and 17 dB gain at 8 dB OBO. This level of efficiency was typically achievable only in more complex and expensive solutions employing asymmetric-only Doherty technology. This device is designed to deliver significantly higher performance when used in asymmetric Doherty PAs.
The AFT21S230S is a 2.1GHz 28V device that provides excellent efficiency for a 230W rated RF output LDMOS transistor. Mounted in an NI-780S-6 package for up to 100MHz VBW, it is designed for use in symmetric or asymmetric doherty applications. For symmetric doherty, it provides 45 percent efficiency at 8dB OBO and 15.5dB gain.
The AFT18HW355S is an in-package Doherty device for high-performance PCS and DCS band applications. It delivers peak power of 56 dBm as a single device with an efficiency exceeding 48 percent at an average power of 8 dB OBO, providing performance comparable to much higher-cost GaN-based solutions. This ultra-compact device, operating at 1805 to 1880 MHz or 1930 to 1995 MHz, supports wideband, multicarrier operation using Freescale’s advanced video bandwidth technology.
The MMDS25254H ADAM is a sophisticated GaAs (gallium arsenide) MMIC (monolithic microwave integrated circuit) capable of phase and peaking adjustment in the 2300 to 2800 MHz range. Product families of 700 to 1000 MHz and 1800 to 2200 MHz are also under development.
Price and supply situation
For pricing information and pre-sample availability, please contact your nearest Freescale distributor. For more information on Freescale RF output LDMOS solutions, please visit www.freescale.com/RFpower .
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