| Operates with lower conduction loss compared to IGBT4
| Maximum overload junction temperature, “up to 175°C”
| All modules use press-fit technology

Infineon Technologies announced on the 18th that it has launched the 1200V TRENCHSTOP IGBT7 and emitter-controlled EC7 diode.
The new IGBTs increase power density and reduce system cost and size. Power modules available in Easy packages meet the needs of industrial drive applications.

Based on a new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip operates with lower conduction losses compared to the IGBT4. It reduces on-state voltage by 20%, significantly reducing losses in industrial drive applications typically operating at medium switching frequencies. Furthermore, it operates with a maximum overload junction temperature of 175°C, providing smooth switching and enhanced controllability.

The newly launched 1200V TRENCHSTOP IGBT7 module is designed with the same pin-out as the TRENCHSTOP IGBT4 module, reducing design effort for manufacturers. The new modules can produce higher output current in the same package or similar levels of output current in a smaller package, enabling designers to implement smaller inverter designs when needed.

All module types use Infineon's PressFit mounting technology, which reduces ohmic resistance and shortens process times.

The new TRENCHSTOP IGBT7 technology is available in the industry-standard EasyPIM housing for current ratings of 10 A and 25 A. For higher power, the EasyPACK 2B supports 100 A. Lead types are FP10R12W1T7_B11, FP25R12W1T7_B11, and FS100R12W2T7_B11.