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Demand for SiC technology efficiency and power density is increasing, expanding customer choices with 700V MOSFETs and 700V/1200V SBDs.
Microchip Technology Inc., through its Microsemi subsidiary, today announced the availability of a family of silicon carbide (SiC) power devices that deliver proven robustness and the performance of wide bandgap technology.

This SiC device, along with Microchip's broad range of MCU and analog solutions, is part of a growing family of reliable SiC products required for fast-growing electric vehicles (EVs) and other high-power applications.
New additions to Microchip's existing SiC power module portfolio include 700V SiC MOSFETs and 700V/1200V Schottky Barrier Diodes (SBDs).
The new SiC MOSFETs and SBDs enable more efficient switching at higher frequencies and pass ruggedness tests at levels critical to ensure long-term reliability.
Unclamped Inductive Switching (UIS) robustness test that measures how well a device withstands performance degradation or early failure under avalanche conditions.Microchip's SiC SBDs demonstrate approximately 20% higher performance than other SiC diodes. Avalanche conditions occur when a voltage spike exceeds the device's breakdown voltage.
Microchip's SiC MOSFETs also outperform comparable products in these ruggedness tests. Even after 100,000 cycles of repeated UIS (RUIS) testing, they exhibited minimal overall parameter degradation, demonstrating excellent gate oxide shielding and channel integrity.
This product is ideal for the growing number of EV systems, including external charging stations, onboard chargers, DC-DC converters, and powertrain/traction control solutions.
The new SiC devices are supported by Microchip's customer-driven product discontinuation policy, which ensures that devices will continue to be produced for as long as customers need them.
Microchip's expanded SiC portfolio is supported by a variety of silicon carbide SPICE models, SiC driver board reference designs, and Vienna Power Factor Correction (PFC) reference designs.
Microchip's SiC products are in mass production along with related support products. We also support a variety of die and package options for SiC MOSFETs and SiC diodes.
“The advancement and adoption of SiC technology has already accelerated, and Microchip not only has a long history in this market but is committed to playing a leading role in ensuring global supply continues to meet the growing demand for these products,” said Rich Simoncic, senior vice president of Microchip’s Discrete and Power Management business unit.
“Microchip is building a portfolio of highly reliable products backed by a robust support infrastructure and supply chain that customers need to execute and scale their development programs,” he added.
Microchip Technology Inc., through its Microsemi subsidiary, today announced the availability of a family of silicon carbide (SiC) power devices that deliver proven robustness and the performance of wide bandgap technology.

Microchip Launches SiC Products for High-Voltage Power Applications
This SiC device, along with Microchip's broad range of MCU and analog solutions, is part of a growing family of reliable SiC products required for fast-growing electric vehicles (EVs) and other high-power applications.
New additions to Microchip's existing SiC power module portfolio include 700V SiC MOSFETs and 700V/1200V Schottky Barrier Diodes (SBDs).
The new SiC MOSFETs and SBDs enable more efficient switching at higher frequencies and pass ruggedness tests at levels critical to ensure long-term reliability.
Unclamped Inductive Switching (UIS) robustness test that measures how well a device withstands performance degradation or early failure under avalanche conditions.Microchip's SiC SBDs demonstrate approximately 20% higher performance than other SiC diodes. Avalanche conditions occur when a voltage spike exceeds the device's breakdown voltage.
Microchip's SiC MOSFETs also outperform comparable products in these ruggedness tests. Even after 100,000 cycles of repeated UIS (RUIS) testing, they exhibited minimal overall parameter degradation, demonstrating excellent gate oxide shielding and channel integrity.
This product is ideal for the growing number of EV systems, including external charging stations, onboard chargers, DC-DC converters, and powertrain/traction control solutions.
The new SiC devices are supported by Microchip's customer-driven product discontinuation policy, which ensures that devices will continue to be produced for as long as customers need them.
Microchip's expanded SiC portfolio is supported by a variety of silicon carbide SPICE models, SiC driver board reference designs, and Vienna Power Factor Correction (PFC) reference designs.
Microchip's SiC products are in mass production along with related support products. We also support a variety of die and package options for SiC MOSFETs and SiC diodes.
“The advancement and adoption of SiC technology has already accelerated, and Microchip not only has a long history in this market but is committed to playing a leading role in ensuring global supply continues to meet the growing demand for these products,” said Rich Simoncic, senior vice president of Microchip’s Discrete and Power Management business unit.
“Microchip is building a portfolio of highly reliable products backed by a robust support infrastructure and supply chain that customers need to execute and scale their development programs,” he added.
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