Microchip Unveils SiC Power Module Family for Reduced Size and Weight
Published2020.03.17 09:39Implementation of system footprint with increased switching efficiency and reduced heat rise
Recently, there has been a surge in demand for silicon carbide (SiC)-based systems for power solution development that maximize efficiency while reducing size and weight.
A portfolio of smaller and lighter SiC power modules has been unveiled, applicable to fields ranging from electric vehicles and dedicated charging stations to smart power grids and industrial and aviation power systems.
▲ A portfolio of SiC power modules with reduced size and weight has been unveiled. <Image=Microchip Technologies>
Microchip Technology announced a family of SiC products including commercially validated SBD (Schottky Barrier Diode)-based 700V, 1200V, and 1700V variant power modules.
The disclosed power module product family consists of topologies such as dual diode, full bridge, phase leg, dual common cathode, and 3-phase bridge, and includes current and package options.
The portfolio consisting of 700V, 1200V, and 1700 SiC SBD modules utilizes Microchip's latest generation SiC dies to not only enhance system stability and reliability but also provide a stable and long application lifecycle.
System developers based on the device's high avalanche performanceThis reduces the need for a snubber circuit, and the stability of the body diode allows for the use of an internal body diode without performance degradation. In addition, maximizing switching efficiency and suppressing heat rise enables the implementation of a smaller system footprint.
When adding a SiC SBC module, multiple SiC diode dies can be integrated into a single module through various options for matching substrate and base plate materials, making the design simpler.
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