Construction of Pyeongtaek Line 2 Cleanroom Commences, Mass Production to Begin in Second Half of 2021
Responding to mid-to-long-term demand driven by the Fourth Industrial Revolution and 5G deployment
Preempting the future market through aggressive investment amidst the spread of non-face-to-face culture


Samsung Electronics is expanding its NAND flash production lines to maintain its lead in memory.

Samsung Electronics announced on the 1st that it began construction of a cleanroom for NAND flash production at its Pyeongtaek Line 2 in May and plans to start mass production in the second half of 2021.

This investment is intended to respond to the mid-to-long-term expansion of NAND demand driven by the advent of the Fourth Industrial Revolution, including AI and IoT, and the rollout of 5G. In particular, this trend is expected to accelerate further due to the recent spread of contactless culture.

Choi Chul, Vice President of Strategy Marketing at Samsung Electronics’ Memory Business Division, stated that the company will preempt future market opportunities through aggressive investment.

The Pyeongtaek Campus, established in 2015, serves as Samsung Electronics' outpost for next-generation memory and features two of the world's largest production lines. The lines expanded through this investment are scheduled to mass-produce Samsung Electronics' cutting-edge V-NAND products.

Samsung Electronics rose to the top of the NAND flash market in 2002 and has maintained the number one position in the global market for over 18 years to date, and in July of last year, it began mass production of 6th generation (1xx-layer) V-NAND products for the first time.