SMPS requires high bus voltage and high power density.
Infineon Launches CoolMOS CFD7 with 650V Breakdown Voltage
Suitable for 0V switching phase shift full bridge topology


Switched Mode Power Supply (SMPS) designs for industrial applications demand higher bus voltages, higher efficiency, and higher power density. To meet these demands, power devices with a breakdown voltage of 650 V are required.

Infineon Technologies AG announced on the 21st the launch of the 650V CoolMOS CFD7 family, which is suitable for resonant topologies in soft switching applications such as telecom, servers, solar, and off-board EV chargers.

The new 650 V product family is suitable for LLC and zero voltage switching phase shift full bridge topologies and offers several advantages over previous generations.

It meets the demands of modern designs by adding a 50V breakdown voltage, integrating a high-speed body diode, and achieving improved switching performance. It also features low reverse recovery charge and excellent thermal behavior.

The RDS(on) dependence on switching losses and overheating is significantly reduced, and hard commutation robustness is excellent. Additionally, the gate charge (Qg) is improved and high-speed switching is achieved, thereby increasing efficiency across the entire load range.

Infineon stated, “The 650V CoolMOS CFD7 offers superior light-load efficiency and improved full-load efficiency compared to competitive devices in SMPS applications,” and “The best-in-class RDS(on) enables customers to increase power density and reduce cost in SMPS.”

The 650V CoolMOS CFD7 is available in TO-220, TO-247, and TO-247 4-pin packages and is available for order now.