Provides 14 percent higher output current than standard
Reduce maintenance costs and effort with automated solutions.

This enables the implementation of maintenance-free motor drive inverters in the fields of robotics and industrial automation.
Infineon Technologies AG announced on the 12th the launch of a new 1200V CoolSiC MOSFET with .XT interconnection technology in an optimized D2PAK-7 SMD package.

This technology reduces losses by up to 80 percent compared to silicon-based solutions, enabling passive cooling without fans. Servo drive solutions across a wide range of power levels can achieve high efficiency using CoolSiC MOSFETs, while applications such as charging infrastructure and industrial power supplies can benefit from SMD devices.

Servo drives are a key component for driving motors in manufacturing equipment. The resistive conduction losses and fully controllable switching transients of SiC MOSFETs are well-suited to the load profiles of these motors. Reduces system losses by 80 percent with dv/dt of 5-8 V/ns at the same EMC level as IGBT solutions.

The new portfolio offers ratings from 30 mΩ up to 350 mΩ. Compared to standard packages, .XT technology dissipates up to 30 percent of losses through chip-package interconnections. CoolSiC .XT products deliver 14 percent higher output current, double the switching frequency, or reduce operating temperature by 10 to 15°C compared to standard technology.

“By combining CoolSiC trench MOSFET chips with our .XT interconnection technology, we have improved thermal and cycling performance in a small package form factor,” said Peter Barber, president of the Industrial Power Control business unit. “This now enables compact integration of drives into motors or robotic arms.”