Increasing demand for MOSFETs with low on-resistance and high withstand voltage characteristics
ROHM Announces 24 Pch MOSFETs Using 5th-Generation Process
52-62% reduction in on-resistance compared to 4th generation process products


As the use of high input voltages in power circuits for advanced control in industrial and consumer devices increases, expectations for low on-resistance and high withstand voltage are also rising for MOSFETs.

On the 17th, ROHM announced that it has developed a total of 24 products, including the single product RQxxxxxAT/RDxxxxxAT/RSxxxxxAT/RFxxxxxAT series and the dual product UTxxx5/QHxxx5/SHxxx5 series, which are -40V and -60V withstand voltage Pch MOSFETs compatible with 24V input.

ROHM explained that by applying the 5th generation fine process, the on-resistance of the new Pch MOSFET was reduced by 62% compared to the 4th generation product for the -40V voltage product and by 52% for the -60V voltage product.

Additionally, it was explained that the quality was improved by optimizing the device structure and adopting a new design that alleviates the electric field in the corner of the gate trench where the electric field concentration occurs the most. He added that it contributes to the long-term stable operation of industrial equipment that requires high quality by simultaneously realizing reliability and low on-resistance, which are usually in conflict.

Going forward, ROHM plans to expand its package offerings to accommodate applications beyond industrial equipment and develop products for automotive applications. Furthermore, in addition to Pch MOSFETs, the company plans to introduce a lineup of Nch MOSFETs.

Meanwhile, 24 products began mass production in August with a monthly production capacity of 1 million units and are available for purchase on online parts distribution sites.