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ROHM Unveils High-Speed ​​Rail-to-Rail CMOS Operational Amplifier

Google 우선 소스Published2021.06.11 08:32
ROHM BD87581YG-C and BD87582YFVM-C
For noise-sensitive automobiles and industrial equipment
Rail-to-rail input/output high-speed CMOS operational amplifier



The accelerating digitalization and high-density of electrical systems in electric vehicles and ADAS systems has exacerbated the noise environment. Traditionally, noise assessments during automotive development were difficult to conduct on boards and as a single system, requiring post-assembly testing. Consequently, failures in assessments necessitated extensive modifications, making noise design a significant challenge.

On the 10th, ROHM introduced the 'BD87581YG-C (1 channel) and BD87582YFVM-C (2 channels)', rail-to-rail input/output high-speed CMOS operational amplifiers (OP Amp) with increased noise immunity for automotive and industrial equipment that require high-speed sensing in harsh environments.
▲ ROHM Launches the BD87581YG-C and BD87582YFVM-C
[Image = ROHM]

ROHM's 'EMARMOUR™' series was developed so that the product itself does not malfunction due to noise, without requiring any special measures in the application. The new product has passed international noise assessment tests, ISO 11452-2 (radio emission test), ISO 11452-4 (BCI test), ISO 11452-9 (short-range immunity test), and IEC 62132-4 (DPI test).

Specifically, under ISO 11452-2, standard products exhibit output voltage fluctuations of more than ±300 mV across all noise frequency bands, while the new product achieves less than ±10 mV. When installed downstream of sensors, it is immune to external noise. The CMOS structure enables high-precision, high-speed signal amplification, reducing design effort for various applications, such as anomaly detection systems.

Mass production of the new product began in May 2021 with a monthly production capacity of 1 million units. Samples are priced at 300 yen (excluding tax). Furthermore, ROHM provides the "ROHM Real Model," a verification simulation model, on its official website. The electrical and temperature characteristics of the actual IC and the simulated values are identical, preventing post-prototyping modifications.
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