United Silicon Carbide 750V 6mΩ SiC Products
Suitable for EV traction drives and in-vehicle chargers
Provides 5µs short-circuit withstand time at low on-resistance


United Silicon Carbide announced on the 15th the launch of industry-leading 750V, 6mΩ products to meet power designers' requirements for high-performance, high-efficiency SiC FETs compared to existing products. The new 6mΩ product offers a robust short-circuit withstand time of 5µs at RDS(on) values less than half those of competing SiC MOSFETs.

The announcement includes nine new products and package options in the 750V SiC FET series with rated specifications of 6/9/11/23/33/44mΩ. All products are available in TO-247-4L packages, and the 18, 23, 33, 44, and 60mΩ products are also offered in TO-247-3L.
The new 750V series, launched to supplement and expand the already available 18mΩ and 60mΩ products, provide designers with more options and increased design flexibility to maintain ample design margins and circuit robustness while achieving optimal efficiency.

United Silicon Carbide's fourth-generation SiC FET employs a cascode configuration combining a SiC JFET and a Si MOSFET. The cascode approach provides the advantages of high-speed and low-loss wide band-gap technology when operating at high temperatures while maintaining easy, stable, and robust gate drive with integrated ESD protection.

These advantages are quantified by figures of merit (FoMs) such as RDS(on) x A in conduction loss per unit die area. The fourth-generation SiC FET demonstrates the lowest values among products currently on the market in both high and low temperature states of the die.

The FoM RDS(on) x EOSS/QOSS is very important in hard-switching applications, and UnitedSiC products are at approximately half the level of competing manufacturers' figures. The FoM RDS(on) x COSS(tr) is important in soft-switching applications, and UnitedSiC's 750V products show approximately 30% lower figures compared to competing 650V-rated products.

In hard-switching applications, the built-in body diode of the SiC FET demonstrates superior performance in recovery speed and forward voltage drop compared to Si MOSFET or SiC MOSFET technologies.

Another advantage integrated into United Silicon Carbide's fourth-generation technology is the dramatic reduction in thermal resistance from die to case through the latest thin-wafer technology and silver-sinter die-attach. This capability enables maximum power output for minimal die temperature rise in demanding applications.

The latest United Silicon Carbide SiC FET products with improved switching efficiency and on-resistance values are ideal for challenging and emerging applications. They can be utilized in all stages of EV traction drives, on-board and off-board chargers, and unidirectional and bidirectional power conversion in general renewable energy inverters, power factor correction, telecom converters, and AC/DC or DC/DC power conversion.

Existing applications can also easily benefit from high efficiency through backward compatibility with Si MOSFET and IGBT gate drives and conventional TO-247 packaging.

The new 750V fourth-generation SiC FET is available for purchase through authorized regional distributors.