STMicroelectronics (President & CEO of Korea, Junsik Park) is taking steps to minimize system power loss with the new STPOWER MDmesh K6 series featuring super junction technology.

ST announced today the launch of its new super-junction STPOWER MDmesh K6 series, which improves key parameters to minimize system power loss.

This series is particularly suitable for lighting applications based on flyback topology, such as LED drivers and HID lamps and adapters, as well as power supplies for flat-panel displays.

ST has introduced super-junction technology that combines best-in-class performance and ease of use with the 800V STPOWER MDmesh K6 series. MDmesh K6 offers the highest RDS(on) per unit area of any 800V device currently available, enabling compact designs with high power density and industry-leading efficiency.

Additionally, the K6 series features a reduced threshold voltage compared to the previous generation MDmesh K5, which lowers operating voltage and reduces power loss, improving efficiency primarily in zero-watt standby mode-based applications. Since the total gate charge (Qg) is also very low, it can have a fast switching speed and reduce losses.

Integrated ESD protection diodes increase the overall reliability of the MOSFETs to Human Body Model Class 2 (HBM Class 2).

“TCI has completed sample testing and evaluation of the new super-junction ultra-high voltage MDmesh K6 series and is impressed by its outstanding Rdson per unit area and total gate charge (Qg) performance characteristics,” said Luca Colombo, CTO and R&D Manager at TCI, an Italian solid-state lighting innovator.

The STP80N240K6 (RDS(on)max = 0.22Ω, Qgtyp = 25.9nC) in a TO-220 through-hole package is the first MOSFET in the MDmesh K6 series to enter volume production, with samples available free of charge from ST eSTore. Volume production for the DPAK and TO-220FP packages is scheduled for January 2022. Pricing starts at $1.013 for orders of 1,000 pieces.

The full MDmesh K6 portfolio is expected to be available by 2022, offering a wide range of RDS(on) from 0.22Ω to 4.5Ω and a variety of package options, including SMD and through-hole.