NXP's new 32T32R family of dedicated solutions enables cost-effective coverage and smaller, lighter 5G radios.

NXP Semiconductors today announced a new series of dedicated RF power solutions for the 32T32R active antenna system using the latest GaN (gallium nitride) technology.

The new series complements NXP's existing portfolio of dedicated GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 GHz to 4.0 GHz.

This gives NXP the largest RF GaN portfolio for massive multiple input multiple output (MIMO) 5G radios.

As 5G networks continue to expand globally, mobile network operators are adding 32T32R radios to extend Massive MIMO coverage beyond ultra-dense urban areas into less dense urban and suburban areas.

By combining 32 antennas instead of 64, we can provide advanced 5G experiences enabled by Massive MIMO while maintaining coverage more cost-effectively.

NXP's 32T32R solution delivers twice the power in the same package as the 64T64R solution, enabling 5G connectivity solutions across the board.It has become smaller and lighter.

This pin compatibility allows network operators to quickly scale frequencies and power levels.

“As 5G deployments continue to expand globally, network operators need to extend coverage without sacrificing performance,” said Jim Norling, vice president and general manager of NXP’s Radio Power High Power Solutions. “By delivering twice the power in the same package size, NXP enables RF engineers to create base stations that are smaller, lighter, and easier to deploy and conceal in urban and suburban areas.”

The new series of GaN-only solutions is designed for an average power of 10W at the antenna, targeting 320W radio units and delivering up to 58% emission efficiency.

It also includes driver and final-stage transistors and leverages NXP's highly linearizable RF GaN technology manufactured in NXP's new GaN fab in Arizona.

For more information, see the fact sheet at nxp.com/DMSPRODUCTS.