As 5G network deployment continues globally, MNOs are increasingly utilizing 32T32R solutions to improve Massive Multiple Input Multiple Output (MIMO) coverage in low-density urban and suburban areas. To utilize 32T32R solutions, it is essential to use high-power devices that increase power levels per channel to achieve the total power required to secure robust coverage of 5G signals.

Amidst this, NXP Semiconductors announced on the 19th new high-power BTS7202 RX front-end module (FEM) and BTS6403/6305 pre-driver for 5G Massive MIMO with up to 20W per channel.

This device was developed and implemented using NXP's silicon germanium (SiGe) process and operates with low current consumption to reduce operating costs for mobile network operators (MNOs). In addition, NXP stated that it supports the improvement of 5G signal quality by providing improved linearity and a reduced noise figure.

NXP explained that the new BTS7202 RX FEM and BTS6403/6305 pre-drivers provide a comprehensive and easy-to-implement solution for 5G base stations, complementing NXP's power amplifier solutions for 32T32R radios. The BTS7202 RX FEM features a switch capable of handling up to 20W of power leakage from the transmission lineup, which reduces system complexity. Additionally, NXP emphasized that the BTS6305 pre-driver reduces costs by integrating a balun.

Doeco Terpstra, Vice President and General Manager of NXP Radio Power Smart Antenna Solutions, said, “As 5G networks begin to become denser, higher-power solutions have become key to maintaining consistent network and signal quality. Customers know that high-power solutions are the way for network operators to address the power demands of 32-antenna solutions without compromising network quality.”