STMicroelectronics (ST), a global semiconductor company supporting various electronic applications and customers, has received recognition for the performance of its new silicon carbide (SiC) power modules immediately upon launch, with multiple modules being adopted in Hyundai Motor’s E-GMP vehicle platform.

ST announced on the 8th that it recently launched a high-power module that improves the performance and driving range of electric vehicles.

ST's new Silicon Carbide (SiC) power module has been adopted in Hyundai Motor's E-GMP electric vehicle platform, which is used in several vehicle models, including the Kia EV6.

With five new SiC-MOSFET-based power modules, vehicle manufacturers can support operating voltages commonly used in electric vehicle traction applications and flexibly select various power ratings.

ST's ACEPACK DRIVE power module, housed in a package optimized for traction applications, offers high stability and robustness thanks to sintering technology, allowing manufacturers to easily integrate it into electric vehicle drives.

The key power semiconductor embedded in this power module is ST's 3rd generation STPOWER SiC MOSFET, which features an industry-leading RDS(ON) rating along with excellent performance in synchronous rectification and very low switching energy.It provides ) x die area).

Marco Monti, President of ST’s Automotive and Discrete Group, stated, “ST’s silicon carbide solutions enable major automotive OEMs to accelerate electrification in the development of next-generation electric vehicles,” adding, “ST’s third-generation SiC technology ensures the highest power density and energy efficiency, enabling the achievement of exceptional vehicle performance, range, and charging times.”

Hyundai Motor, a leader in the electric vehicle market, has adopted ST's 3rd generation ACEPAC Drive SiC-MOSFET-based power module for its current generation EV platform, E-GMP.

In particular, this module is scheduled to power the Kia EV6 model.

Shin Sang-cheol, Team Leader of the Inverter Design Team at Hyundai Motor Group, explained, “ST’s SiC-MOSFET-based power modules are the optimal solution for traction inverters that support longer driving ranges,” adding, “Through collaboration with ST, a leading semiconductor company innovating electrification through continuous technology investment, we were able to make significant progress in realizing more sustainable electric vehicles.”

ST, a leader in SiC technology, has already supplied STPOWER SiC devices to over 3 million passenger cars currently in mass production worldwide.

Compared to conventional silicon power semiconductors, SiC devices can handle higher operating voltages in a smaller size, enabling faster charging and superior vehicle power.

It improves driving range with higher energy efficiency and increases reliability. SiC is being widely adopted in various electric vehicle systems, ranging from DC-DC converters and traction inverters to on-board chargers (OBCs) capable of bidirectional operation that transmit power from the vehicle to the grid.

ST, an integrated device manufacturer (IDM), supports the electrification strategies of automotive manufacturers through a SiC strategy that ensures the quality and security of power supplies.

Recently, ST has been responding rapidly to support the rapidly expanding electric mobility market by establishing a fully integrated SiC substrate manufacturing facility in Catania, Italy, scheduled to begin production in 2023.