Mouser Electronics, an authorized distributor of the latest semiconductors and electronic components worldwide, announced on the 3rd that it is supplying Onsemi's EliteSiC silicon carbide (SiC) solution family.

The EliteSiC portfolio includes diodes, MOSFETs, IGBTs, and SiC diode power integration modules (PIMs), as well as AEC-Q100 certified devices.

These devices are optimized to provide reliable, high-efficiency performance for energy infrastructure and industrial application systems.

Renewable energy and high-power industrial applications require the high breakdown voltage (BV) provided by the 1,700V NTH4L028N170M1 EliteSiC MOSFET.

The NTH4L028N170M1 provides a maximum gate-source voltage (VGS) range of -15V/+25V and is suitable for fast switching applications where the gate voltage varies up to -10V, offering enhanced system reliability.

This 1,700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC under test conditions of 1,200V at 40A, which is market-leading performance.

With this low Qg, the device can achieve high efficiency in fast switching and high-power renewable energy applications.

NDSH25170A with a BV rating of 1,700V The NDSH10170A EliteSiC Schottky diode provides an enhanced margin between the maximum reverse voltage (VRRM) and the diode's peak repeat reverse voltage.

In addition, through such devices, designers can achieve stable high-voltage operation at high temperatures while providing high efficiency with SiC.

ON Semi EliteSiC solutions, such as EV charging stations, power grids utilizing renewable energy, and high-voltage/high-current industrial application systems, provide best-in-class efficiency while reducing power loss.

Mouser™, an industry-leading New Product Introduction (NPI) distributor supplying the widest variety of semiconductors and electronic components, has launched more than 122,000 new components over the past two years.