Samsung Electronics has developed the largest capacity DRAM ever for a single chip and will begin mass production within the year.

Samsung Electronics announced on the 1st that it has developed the industry's first 12-nanometer class 32Gb (gigabit) DDR5 DRAM. 32Gb is the largest capacity ever for a single DRAM chip.

Samsung Electronics, which developed 64Kb (kilobit) DRAM in 1983, achieved the feat of increasing DRAM capacity 500,000 times in 40 years with the development of 32Gb DRAM in 2023.

Following the mass production of 12nm-class 16Gb DDR5 DRAM in May 2023, Samsung Electronics further solidified its technological leadership in the competition for DRAM fine process technology by successfully developing the industry's largest capacity 32Gb DDR5 DRAM.


In particular, this 32Gb product achieves double the capacity of 16Gb DRAM through architectural improvements within the same package size, making it possible to manufacture 128GB modules without the TSV process.

In addition, compared to a module equipped with 16Gb DRAM, it is possible to improve power consumption by about 10% based on the same 128GB module, so it is expected to be an optimal solution for IT companies that prioritize power efficiency, such as data centers.

Samsung Electronics plans to continuously expand its high-capacity DRAM lineup through the development of this 12nm-class 32Gb DDR5 DRAM. In addition, we plan to lead the next-generation DRAM market by collaborating with global IT companies with high-capacity, high-performance, and low-power products that will lead the AI era.

Samsung Electronics plans to mass-produce 12nm-class 32Gb DDR5 DRAM within the year.

"With this 12nm-class 32Gb DRAM, we have secured a solution capable of implementing up to 1TB modules in the future," said Hwang Sang-jun, Vice President and Head of DRAM Development at Samsung Electronics' Memory Business Division. "Samsung Electronics will continue to overcome the limitations of memory technology through differentiated process and design capabilities."