STMicroelectronics (hereinafter ST) announced on the 15th that it has launched MasterGaN1L and MasterGaN4L.

It simplifies power supply design through wide-bandgap technology with next-generation integrated gallium nitride (GaN) bridge devices.

ST's MasterGaN product family incorporates a 650V GaN HEMT (High Electron-Mobility Transistor), an optimized gate driver, system protection features, and an integrated bootstrap diode that supports power supply to the device at startup.

With this functional integration, designers can address the complex gate drive requirements of GaN transistors, and by being housed in a small power package, it supports improved reliability, reduced Bill of Materials (BOM) costs, and simplified circuit layout.

The latest device includes two GaN HEMTs connected in a half-bridge configuration. It has been reported that this arrangement is suitable for implementing switch-mode power supplies, adapters, and chargers based on active clamp flyback, active clamp forward, and resonant converter topologies.

MasterGaN1L and MasterGaN4L are pin-compatible with MasterGaN1 and MasterGaN4 devices, respectively. With newly optimized turn-on delays compared to previous devices, they can operate at higher frequencies and efficiency even at low loads, especially in resonant topologies.

In addition, it supports input signal voltages ranging from 3.3V to 15V through hysteresis and pull-down, allowing for easy direct connection to control devices such as microcontrollers, DSPs, and Hall-effect sensors. Designers can reduce system power consumption with a dedicated shutdown pin and prevent cross-conduction through two GaN HEMTs that accurately match timing with an interlocking circuit.

The MasterGaN1L HEMT provides a rated current of 10A and an RDS(on) of 150mΩ and can be used for applications up to 500W. Because it consumes only 20mW at no-load power and supports high conversion efficiency, designers can meet the stringent requirements for standby power and average efficiency needed in industrial fields. The MasterGaN4L HEMT supports applications up to 200W with a rated current of 6.5A and an RDS(on) of 225mΩ.

EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demo boards are also provided to allow evaluation of the capabilities of each device. These boards feature GaN-based half-bridge power modules finely tuned for operation in LLC applications. New topologies can be rapidly implemented by utilizing MasterGaN1L and MasterGaN4L devices without the need for a perfectly designed PCB.

Both devices are currently produced in 9mm x 9mm x 1mm GQFN packages.