It is estimated that greenhouse gas emissions from residential and industrial buildings account for 26% of total emissions, while indirect emissions such as heating, cooling, and electricity account for about 18%. Consequently, as governments around the world strive to achieve their energy and climate commitments, solutions that are highly energy-efficient and low in carbon emissions are becoming increasingly important.

ON Semi announced on the 27th the launch of the 1200V SPM31 Intelligent Power Module (IPM).

It was explained that the SPM 31, which utilizes the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology, offers high efficiency, a small footprint, and high power density, thereby lowering total system costs.

Optimized IGBT-based IPMs are ideal for 3-phase inverter driver applications such as heat pumps, commercial HVAC systems, servo motors, industrial pumps, and fans.

The SPM 31 IPM maximizes efficiency by adjusting the frequency and voltage of the power supplied to the 3-phase motor to control the power supplied to the inverter compressor and fan in the heat pump and air conditioning system.

ON Semi cited the 25A rated SPM31 utilizing FS7 technology as an example, stating that it reduces power loss by up to 10% and improves power density by up to 9% compared to previous generation products.

With the transition to electrification and the mandatory enhancement of efficiency, modules enable manufacturers to significantly improve system design while increasing the efficiency of cooling and heating applications. ON Semi's SPM31 IPM product family equipped with FS7 boasted that it would further reduce global harmful emissions by achieving high efficiency while reducing energy loss.

The highly integrated module includes FS7 IGBTs with gate driver ICs and multi-protection features, providing industry-leading thermal performance with support for a wide current range of 15A to 35A.

In addition, it was explained that the SPM31 FS7 IGBT IPM, which features high power density, is expected to save mounting space and improve performance while reducing development time. The SPM31 IPM supports: built-in gate drive and protection functions; the application of low-loss, short-circuit IGBTs; the use of separate negative IGBT terminals for each phase to support various control algorithms; built-in under-voltage protection (UVP); built-in bootstrap diodes and resistors; built-in high-speed, high-voltage integrated circuits; and a single ground power supply.