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SK Hynix: "We Will Become a Key Player in AI Memory, Even in Next-Generation NAND Storage"
▲SK Hynix Vice President Kim Cheon-seong (in charge of eSSD Product Development) is giving a presentation at the '2025 OCP Global Summit.'
OCP Global Summit Unveils Next-Generation AI-Optimized NAND Storage Strategy
The 'AIN Family' is optimized for the AI era, specializing in performance, bandwidth, and capacity.
The 'AIN Family' is optimized for the AI era, specializing in performance, bandwidth, and capacity.
SK Hynix has announced its ambition to grow into a key player in AI memory through various collaborations in next-generation NAND storage.
SK Hynix announced its next-generation NAND storage product strategy at the '2025 OCP (Open Compute Project) Global Summit' held in San Jose, California, USA.
At this event, SK Hynix unveiled the 'AIN Family', a NAND storage product line optimized for the AI era, and presented its vision to leap forward as a key player in the global AI memory market.
SK Hynix introduced the AIN Family product line, each specialized in terms of performance, bandwidth, and density.
AIN P(Performance) is a high-performance NAND solution that efficiently processes massive data input/output that occurs in large-scale AI inference environments. It is expected to sample in late 2026, based on a new NAND-controller architecture that minimizes bottlenecks and improves energy efficiency.
AIN D(Density) is a high-capacity solution that stores large amounts of data at low power and cost. Designed as a mid-tier storage solution, it expands capacity to petabytes, surpassing existing QLC-based terabyte-level SSDs, delivering SSD speed and HDD economics.
AIN B (Bandwidth) is a solution that expands bandwidth by stacking NAND flash memory, utilizing SK Hynix's "HBF (High Bandwidth Flash)" technology. Similar in structure to HBM, it is a strategic product designed to address memory capacity shortages resulting from the proliferation of AI inference and LLM (Large-Scale Language Models).
To expand the AIN B ecosystem, SK Hynix signed a Memorandum of Understanding (MOU) with SanDisk in August for HBF standardization and hosted "HBF Night" during the OCP event. Dozens of global big tech executives, domestic and international semiconductor architects, and engineers attended the event, sharing the direction of NAND storage innovation through panel discussions and collaborative proposals.
SK hynix Chief Development Officer (CDO) Hyun Ahn said, “Through this OCP Global Summit and HBF Night, we were able to showcase SK hynix’s present and future in a rapidly changing market environment centered on AI.” He added, “We will continue to grow as a key player in the AI memory market through cooperation with customers and partners in the next-generation NAND storage.”
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