Tektronix TIF 2026
This page was machine-translated and may differ from the original. View original

Infineon Launches 2300V SiC-Based Power Module… Improves High-Voltage Energy System Efficiency

Google 우선 소스Published2026.05.13 10:34

XHP™ 2 Module with 1500V DC Link Support Unveiled, Achieving 300kW/L Power Density

Infineon Technologies has presented a foundation for simultaneously improving efficiency and power density in high-voltage energy systems through its XHP™ 2 power module, which utilizes 2300V SiC MOSFETs.

Infineon announced on the 13th that it has launched the XHP™ 2 CoolSiC™ power module, which supports a maximum DC link voltage of 1500V.

With the recent expansion of renewable energy, the increasing voltage of power conversion systems is becoming a major trend. This is because higher voltage allows for a reduction in current, thereby improving system efficiency. Consequently, there is a growing demand for power semiconductors that operate stably even in high-voltage environments.

This product is characterized by the application of a silicon carbide (SiC)-based 2300V MOSFET, which simultaneously reduces switching losses and conduction losses compared to existing silicon devices. It offers on-resistance (RDS(on)) of 1mΩ to 2mΩ and 4kV or 6kV isolation voltage options, and is designed to facilitate parallel configuration through a symmetric switching structure.

These technical characteristics lead to improved efficiency and miniaturization at the system level. Inverters can operate at higher switching frequencies to reduce harmonics, and allow for reduced equipment size or increased power density based on the same output.

Applications include high-voltage-based renewable energy facilities such as wind, solar, and battery energy storage systems. The standardized XHP 2 package is designed to balance performance and efficiency according to various application requirements.

In addition, durability against thermal and mechanical stress was ensured by applying .XT interconnection technology, and the assembly process was simplified and thermal performance consistency was maintained through the option of pre-coated thermal conductive interface material (TIM).

The improvement effect was also confirmed in actual performance verification. In the wind power demo system, a power density of 300 kW/L was achieved, and in the battery storage system test, semiconductor losses were found to be less than 0.7% of the total output. This is interpreted as an indicator showing that efficiency improvement and loss reduction are possible simultaneously in high-voltage power conversion systems.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.
명세환 기자
명세환 기자