STMicroelectronics has launched a 700V-class PowerGaN power semiconductor to improve power conversion efficiency in high-power systems such as AI servers and robotics. This product is a GaN-based power device added to the STPOWER portfolio, aiming to improve the efficiency and increase power density of high-voltage power supplies.

ST announced on the 27th that it has launched seven 700V PowerGaN devices. The company explained that due to the increasing power consumption of AI servers and the high output of industrial automation equipment, the efficiency and size of power conversion circuits are emerging as key design variables.

The new product is designed to support stable operation in high-power systems based on a 700V operating rating. GaN-based power devices are suitable for high-frequency power conversion circuits due to their low conduction and switching losses and zero reverse recovery charge characteristics. This can reduce the heat generation burden on the power supply and contribute to system miniaturization by reducing the size of magnetic components and passive parts.

Application areas include power supplies for AI servers, humanoid robotics, industrial power systems, home appliances, and smart grid converters for energy generation, distribution, and storage. In particular, server and robot systems are considered areas where power supply stability and thermal management become critical as computational and operational performance increases.

Mario Alleo, Senior Vice President of ST Power and Discrete Subgroup, stated, “With the addition of 700V devices, we have expanded the application range of GaN technology to medium and high-power applications,” adding, “In the future, we will add various voltage ratings and features to support AI servers, humanoid robots, industrial power systems, and advanced consumer power applications.”

This product family consists of seven types of GaN HEMTs that provide continuous current ratings of 6A to 29A and RDS(on) typically of 53mΩ to 270mΩ. Based on ultra-low internal capacitance and low gate charge, they are designed to achieve higher efficiency compared to existing silicon devices in the Qg x RDS(on) performance index.

The packages are available in DPAK, TO-LL, and PowerFLAT surface mount formats. The TO-LL and PowerFLAT-based products feature a Kelvin source connection structure to separate the gate control circuit and power path, enhancing noise immunity and gate driver protection performance. ST stated that these products can be used to replace existing MOSFETs or to implement new high-frequency topologies.

The new 700V PowerGaN transistors are currently in production and are available through eSTore and official ST distributors. Prices range from $0.63 to $2.25 per unit for orders of 1,000. With this product family, ST plans to expand its PowerGaN portfolio and broaden its scope for supporting high-power applications.