1.2mm ² FemtoFET, ultra-small LGA package 80% smaller than conventional 60V load switches

TI (CEO Kent Tran) announced the launch of a new 60V N-channel FemtoFET power transistor product that achieves the industry's lowest resistance.

The new CSD18541F5 reduces power loss in the end system by achieving 90% lower resistance than existing 60V load switches. In addition, it is available in an ultra-small 1.53mm x 0.77mm silicon-based package, which reduces the footprint by 80% compared to load switches available in SOT-23 packages.

The CSD18541F5 MOSFET maintains a rated on-resistance (Rdson) of 54mW and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load switch applications.

In addition, the miniaturized LGA (land grid array) package has a 0.5mm pitch between pads, making it easy to mount during manufacturing.

The CSD18541F5 is a new product in the FemtoFET MOSFET family of TI NexFET™ technology portfolio that provides higher voltage and facilitates manufacturing.