Development of 1700V withstand voltage SiC-MOSFET, SCT2H12NZ
Control ICs and evaluation boards for driving SiC-MOSFETs are available for purchase online.

ROHM Corporation has developed a 1700V withstand voltage SiC-MOSFET (SCT2H12NZ) for industrial equipment such as general-purpose inverters and manufacturing devices that operate at high voltage.

With the recent rise in awareness regarding energy conservation, power semiconductors capable of achieving low power consumption are being adopted in industrial equipment such as general-purpose inverters and manufacturing devices. These industrial devices often incorporate auxiliary power supplies that provide power voltage for driving control ICs and various systems, in addition to the main power circuit, and Si-MOSFETs with a voltage rating of 1000V or higher are widely used in these auxiliary power supplies.

However, Si-MOSFETs with a voltage rating of 1000V or higher generate significant heat due to large conduction losses, which poses challenges regarding the number of peripheral components and mounting area, thereby limiting the miniaturization of devices. ROHM has solved these challenges with SiC-MOSFETs with low conduction losses and control ICs for driving SiC-MOSFETs.

This product is a SiC-MOSFET suitable for the high voltage and low current characteristics required for auxiliary power supplies in industrial equipment. It reduces conduction losses to 1/8 compared to commonly used Si-MOSFETs, contributing to the low power consumption of the device.


In addition, by using the AC/DC converter control IC (BD7682FJ-LB) for driving SiC-MOSFETs together, the performance of the new product can be maximized, thereby enabling miniaturization of peripheral components through dramatic high efficiency of up to 6% and significant loss reduction.

Mass production began in January 2016, and in April, online sales began for the evaluation board “BD7682FJ-LB-EVK-402” which is equipped with this product and an AC/DC converter control IC (BD7682FJ-LB) that is optimal for driving SiC-MOSFETs.