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800V CoolMOS™ P7 Series, Setting New Standards in Efficiency and Thermal Performance
Infineon Technologies (CEO Lee Seung-soo) announced the launch of the 800V CoolMOS™ P7 series.
This 800V MOSFET product family applying superjunction technology combines best-in-class performance with excellent ease of use. These new products meet market demands for performance, design convenience, and price-to-performance ratio, making them suitable for low-power SMPS applications. They are primarily used in flyback topology applications found in adapters, LED lighting, audio, industrial, and auxiliary power supply applications.

The 800V CoolMOS P7 series achieves efficiency improvement of up to 0.6 percent. This means MOSFET temperatures 2~8°C lower compared to CoolMOS C3 or competitors' products in typical flyback applications.
This is achievable through optimization of device parameters, reducing Eoss and Qg by more than 50 percent while also lowering Ciss and Coss. This lowers switching losses and provides superior DPAK RDS(on) products, enabling designs with higher power density. Customers can reduce BOM costs and simplify assembly processes.
Additionally, these products are designed for ease of use. By integrating a Zener diode, ESD robustness is enhanced, thereby reducing manufacturing yield losses related to ESD. Furthermore, by achieving industry-leading 3V V(GS)th and the lowest VGS(th) variation of only ±0.5V, they are convenient to drive and design is facilitated. This reduces gate drive voltage and switching losses while preventing unexpected operation in the linear region.
Infineon Technologies (CEO Lee Seung-soo) announced the launch of the 800V CoolMOS™ P7 series.
This 800V MOSFET product family applying superjunction technology combines best-in-class performance with excellent ease of use. These new products meet market demands for performance, design convenience, and price-to-performance ratio, making them suitable for low-power SMPS applications. They are primarily used in flyback topology applications found in adapters, LED lighting, audio, industrial, and auxiliary power supply applications.
The 800V CoolMOS P7 series achieves efficiency improvement of up to 0.6 percent. This means MOSFET temperatures 2~8°C lower compared to CoolMOS C3 or competitors' products in typical flyback applications.
This is achievable through optimization of device parameters, reducing Eoss and Qg by more than 50 percent while also lowering Ciss and Coss. This lowers switching losses and provides superior DPAK RDS(on) products, enabling designs with higher power density. Customers can reduce BOM costs and simplify assembly processes.
Additionally, these products are designed for ease of use. By integrating a Zener diode, ESD robustness is enhanced, thereby reducing manufacturing yield losses related to ESD. Furthermore, by achieving industry-leading 3V V(GS)th and the lowest VGS(th) variation of only ±0.5V, they are convenient to drive and design is facilitated. This reduces gate drive voltage and switching losses while preventing unexpected operation in the linear region.
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