Equipped with 1.5GB ultra-low-power DRAM and 3D V-NAND flash technology

Samsung Electronics has launched the industry's first '800GB Z-SSD' with a response speed more than five times faster than existing high-performance NVMe SSDs, opening up a new premium market with 3D V-NAND flash technology.

Samsung Electronics, which developed Z-SSD in 2017, launched the '800GB Z-SSD' product, providing the most efficient solution for ultra-high-speed processing and analysis of cache data and log data in next-generation markets such as artificial intelligence, big data, and IoT.

Samsung Electronics' '800GB Z-SSD' is equipped with ▲Z-NAND with a read speed more than 10 times faster than 3-bit V-NAND ▲high-speed response (Ultra Low Latency) controller ▲1.5GB capacity ultra-high-speed, ultra-low power LPDDR4 mobile DRAM, and realizes a write response speed of 16㎲, which is more than 5 times faster than the write response speed of the existing 3-bit-based high-performance NVMe SSD (PM963), and a random read performance of 750K IOPS, which is 1.7 times faster.

Additionally, the '800GB Z-SSD' guarantees a usage period of up to 5 years when 800GB is written 30 times a day, and if daily usage exceeds this, the maximum total write usage capacity is guaranteed up to 42,000TB (terabytes).

In particular, it doubles the reliability (MTBF, Mean Time Between Failures) to 2 million hours while simultaneously implementing the highest capacity and performance. Systems equipped with Z-SSD can simultaneously achieve the best ‘performance’, ‘durability’, and ‘reliability’.

Samsung Electronics is leading the existing PC SSD, enterprise server and storage SSD, and consumer SSD markets, and with the launch of the '800GB Z-SSD', it has secured solid product competitiveness in the premium SSD market, including SSDs for next-generation supercomputers (HPC).

“With the launch of this higher-capacity Z-SSD, we are now able to provide global supercomputer customers with a next-generation solution that will further enhance their IT investment efficiency,” said Han Jin-man, Senior Vice President and Head of Product Planning at Samsung Electronics’ Memory Business Division. “We will continue to grow the premium SSD market by developing next-generation Z-SSDs with higher capacities and product competitiveness in a timely manner.”

Following the launch of the '1st Generation Single Port Z-SSD Lineup (800GB/240GB)' based on the 3rd generation (48-layer) V-NAND, Samsung Electronics plans to expand its Z-SSD lineup and lead the premium storage market by launching the '2nd Generation Dual Port Z-SSD Lineup' this year, which can further improve system performance by expanding availability with two connection ports.

Meanwhile, Samsung Electronics plans to announce its advanced Z-SSD core technology and lineup that will lead the premium market at the 'International Solid-State Circuits Conference 2018' to be held in San Francisco, USA on February 11.