Developed based on a monolithic silicon design with enhanced turn-off capability

Infineon Technologies has launched Infineon Prime Soft, a new family of diodes designed for the latest IGBT applications.

This diode family is characterized by an increased turn-off capability of 5 kA/µs. Prime Soft was developed based on the IGCT freewheeling diode family, which is based on a monolithic silicon design. Suitable applications include HVDC (High Voltage Direct Current) / FACTS (Flexible AC Transmission Systems, devices that increase transmission capacity by improving voltage stability in power transmission and distribution systems) and intermediate voltage drives using voltage-type converters. These applications have strict requirements regarding power loss.

Prime Soft diodes are based on a monolithic silicon design that increases dynamic silicon area by more than 25 percent compared to multichip diodes, providing the industry's lowest conduction losses. This new design improves switching power from 6 to 10 MW with a maximum junction temperature of 140°C. Compared to free-flowing contacts without a rigid metallic connection between silicon and molybdenum carriers, this new device using a bonded method has a thermal resistance approximately 20 percent lower.

In addition to achieving high reliability and excellent thermal characteristics, Infineon Prime Soft diodes minimize switching losses. The soft reverse recovery operation does not cause improper oscillation under any operating conditions. In addition to these electrical parameters, the new mechanical concept simplifies the stack structure by serially stacking press-pack IGBTs and freewheeling diodes, reducing the time required for stack design by up to 50 percent.