GaN solution engineering samples now available
High power density and best-in-class efficiency are its strengths.

Infineon Technologies announced that it will start volume production of its CoolGaN™ products by the end of 2018. “As a world leader in power solutions, Infineon is focusing on gallium nitride as the next frontier in power management,” said Steffen Metzger, Senior Director of the High Voltage Conversion business line at Infineon.

Infineon will be the first choice for customers seeking GaN solutions. The GaN market is gaining momentum, and GaN technology offers clear advantages in specific applications.

“It can lower operating and capital costs, and higher power density enables smaller, lighter designs, which can lower overall system costs,” he said.

Infineon's CoolGaN is a highly reliable, globally proven GaN solution. During the quality assurance process, not only the device itself is tested, but also its performance in applications.

CoolGaN far surpasses the performance of other GaN products on the market. With a failure rate of 100 ppm (parts per million), the expected lifespan is approximately 55 years, far exceeding the required lifespan of 40 years.

Additionally, CoolGaN can deliver twice the output power in a given energy storage slot size, saving space and achieving higher efficiency.

Volume production of CoolGaN 400V and 600V e-mode HEMTs is scheduled to begin by the end of 2018. CoolGaN 400V is available in SMD bottom-cooled TO-leadless and top-cooled DSO-20-87 packages with 70mΩ.

CoolGaN 600V is available in the top-cooled DSO-20-87 package and the bottom-cooled DSO-20-85 package. Additionally, 70 mΩ and 190 mΩ 600V CoolGaN devices in bottom-cooled TO-leadless and DFN 8x8 packages will be added.