Samsung Electronics has started mass production of 16Gb LPDDR4X (Low Power Double Data Rate 4X) mobile DRAM using a second-generation 10-nanometer process.

Samsung Electronics has started mass production of 16Gb LPDDR4X mobile DRAM eight months after starting mass production of 2nd generation 10nm-class 8Gb DDR4 server DRAM.

Accordingly, Samsung Electronics plans to expand the proportion of its DRAM product line using the second-generation 10-nanometer process to over 70%.

Through this mass production, Samsung Electronics has established a stable supply system to keep pace with the increasing market demand for mobile DRAM.

The second-generation 10nm-class 16Gb LPDDR4X DRAM is being mass-produced at a speed about twice as fast as the 20nm-class 4Gb LPDDR3 mobile DRAM, which began mass production in April 2013.

In addition, it has the same operating speed (4,266 Mb/s) as the first-generation 10nm-class 16Gb LPDDR4X installed in the latest flagship smartphones, but with a 10% reduction in power consumption, it can further extend the battery life of mobile devices.

In particular, the 8GB DRAM package equipped with four 16Gb chips can transfer 34.1GB of data per second, and with the package thickness reduced by more than 20% compared to the first generation, it enables customers to design slimmer mobile devices.all.

Samsung Electronics has expanded the business scope of its 10nm-class 8GB mobile DRAM from the existing flagship mobile market to the high-end market, enabling more consumers to benefit from the convenience of using the latest memory.

Jeon Se-won, Executive Vice President of the Marketing Team at Samsung Electronics’ Memory Business Division, stated, "With the mass production of the industry's only 2nd generation 10nm-class mobile DRAM, we have become more proactive in responding to the increased DRAM capacity of next-generation mobile devices," adding, "We will continue to expand our premium DRAM lineup."

Samsung Electronics plans to rapidly transform the existing mobile DRAM market by providing a lineup of various capacities (4GB, 6GB, and 8GB) based on 16Gb LPDDR4X DRAM chips.