Bootstrap diode integration in a monolithic manner
Suitable for general-purpose motor drive applications under 1kW
On the 12th, Infineon Technologies launched a new half-bridge 650V ice driver product based on its SOI technology.

The 2ED2304S06F offers excellent negative vs. transient immunity, integrates bootstrap diodes in a monolithic manner, and provides excellent latch-up immunity. By combining this with high-frequency switching, system robustness and reliability can be enhanced, while miniaturizing the size and lowering BOM costs.

This half-bridge gate driver is suitable for large and small home appliances, low-power drives, and general-purpose inverter-type motor drive applications under 1kW.

The 2ED2304S06F supports sourcing and sink currents of 360mA and 700mA, respectively, with propagation delay times of 310ns and 300ns. It pairs well with IGBT and MOSFET switches rated up to 650V.

The built-in bootstrap diode provides fast reverse recovery characteristics at a rated on-resistance of 36 ohms. Negative transient resistance to repetitive -100V pulses ensures robust and reliable motor operation.

In addition, as a protection function, it additionally provides an independent low-voltage lockout (UVLO) function for the upper and lower power supplies.

Electrically and functionally, this half-bridge gate driver can directly replace the previous generation products, the IR2304SPBF and IRS2304SPBF.

The 2ED2304S06F is available in an industry-standard DSO-8 (SOIC8) package. Mass production has now begun, and orders for mass production samples are available.