| 80% lower switching loss compared to silicon IGBTs
| Half-bridge topology, expanding the supported power range
| NTC temperature sensor integration, device monitoring support

Infineon Technologies AG today launched a new 1200V CoolSiC MOSFET family to meet the rapidly growing demand for silicon carbide (SiC) solutions.
CoolSiC Easy 2B power modules increase power density, significantly reducing system and operating costs.

This module achieves inverter efficiency exceeding 99%, with approximately 80% lower switching losses compared to silicon IGBTs. Leveraging the characteristics of SiC, it can operate at the same or higher switching frequency. This is particularly advantageous for high-speed switching applications such as UPS and energy storage devices.

Power modules using the Easy 2B standard package feature the industry's lowest parasitic inductance. Infineon offers the industry's widest range of SiC products using the Easy package, including half-bridge, six-pack, and booster modules. CoolSiC Easy 2B in half-bridge configuration allows easy implementation of 4-pack (single-phase) and 6-pack (three-phase) topologies.

This new product expands the power range supported by the half-bridge topology, with an on-resistance (RDS(on)) per switch of just 6 mΩ. Furthermore, the integrated body diode enables low-loss freewheeling and eliminates the need for a separate diode chip.

Device monitoring can be achieved by integrating an NTC temperature sensor, and assembly time can be reduced when mounting the device by applying PressFIT technology.

CoolSiC MOSFET Easy 2B modules are already available.

Meanwhile, Infineon also launched a CoolSiC MOSFET six-pack module with RDS(ON) of 45 mΩ in the Easy 1B package.