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62mm industry standard package SiC MOSFET module
Easy miniaturization due to low switching and conduction losses
Infineon Technologies AG announced on the 16th that it is adding a 62mm industry standard package to its CoolSiC MOSFET 1200V module family.

Unlike conventional 62mm IGBT modules made of silicon (Si), the CoolSiC 62mm module made of silicon carbide (SiC) can be used in applications such as solar, servers, energy storage, EV chargers, traction, commercial induction cooking, and power conversion systems.
CoolSiC 62mm modules feature low switching and conduction losses. Operating the device at high switching frequencies allows for the use of smaller passive components. This enables smaller inverter designs, reducing overall system size and cost.
The housing is mechanically robust with a base plate and screw connections, enabling high system availability, i.e. low repair costs and less downtime.
It has excellent thermal cycling performance and high reliability with a continuous operating temperature of 150°C (Tvjop), and the symmetrical design inside the housing enables the same switching conditions for the upper and lower switches. Thermal performance can be further improved by using modules with TIM (Thermal interface material).
The 62 mm package CoolSiC MOSFET 1200 V products are available in 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A configurations.
Easy miniaturization due to low switching and conduction losses
Infineon Technologies AG announced on the 16th that it is adding a 62mm industry standard package to its CoolSiC MOSFET 1200V module family.
▲ 1200V CoolSiC MOSFET 62mm module [Photo = Infineon]
Unlike conventional 62mm IGBT modules made of silicon (Si), the CoolSiC 62mm module made of silicon carbide (SiC) can be used in applications such as solar, servers, energy storage, EV chargers, traction, commercial induction cooking, and power conversion systems.
CoolSiC 62mm modules feature low switching and conduction losses. Operating the device at high switching frequencies allows for the use of smaller passive components. This enables smaller inverter designs, reducing overall system size and cost.
The housing is mechanically robust with a base plate and screw connections, enabling high system availability, i.e. low repair costs and less downtime.
It has excellent thermal cycling performance and high reliability with a continuous operating temperature of 150°C (Tvjop), and the symmetrical design inside the housing enables the same switching conditions for the upper and lower switches. Thermal performance can be further improved by using modules with TIM (Thermal interface material).
The 62 mm package CoolSiC MOSFET 1200 V products are available in 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A configurations.
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