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Microchip Unveils SiC SBD Power Components to Boost EV Reliability
Published2020.10.29 10:07AEC-Q101 qualified SiC SBD power devices
Microchip Technology Inc. (NASDAQ: MCHP) today announced the availability of newly qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices, providing electric vehicle (EV) system developers with solutions that meet stringent automotive quality standards across a wide range of voltage, current, and package options.
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Microchip Launches 700/1200V SiC SBD Products [Image = Microchip]
AEC-Q101 qualified devices help electric vehicle power developers maximize system reliability and durability, while maintaining high quality and enabling stable, long application life. The device, with its superior avalanche performance, reduces the need for external protection circuitry, reducing system cost and complexity.
SiC automotive power devices complement Microchip's broad portfolio of controller, analog and connectivity solutions, providing developers with comprehensive system solutions for electric vehicles and charging infrastructure.
Additionally, Microchip offers a broad portfolio of 700, 1200 and 1700V SiC SBD and MOSFET power modules utilizing the latest generation of SiC die.
Meanwhile, Microchip announced that its own durability tests on SiC SBDs have shown that they deliver approximately 20 percent higher energy conservation in Unclamped Inductive Switching (UIS), the lowest leakage current at high temperatures, and have proven to extend system life and enable more stable operation.
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