UnitedSiC 750V support 4th generation SiC FET 4 types,
Reduce turn on/off loss during hard switching
Provides low conduction losses during soft switching


UnitedSiC announced on the 8th that it has launched four 750V SiC FETs based on its 4th generation silicon carbide (SiC) FET technology platform.

Available in 18 mΩ and 60 mΩ options, the four new SiC FET devices offer high figure of merit (FoM) with reduced on-resistance per unit area and low intrinsic capacitance.

In hard switching applications, 4th generation FETs exhibit the lowest RDS(on) × EOSS(mΩ-uJ) to reduce turn on/off losses. In soft switching applications, low RDS(on) × Coss(tr) (mΩ-nF) specifications provide low conduction losses and high frequencies.

The four new devices outperform competing SiC MOSFETs at both low (25°C) and high (125°C) temperature operation and offer the lowest integrated diode VF with reverse recovery capability that delivers low dead-time losses and improved efficiency.

The new products supporting 750 V provide more design headroom and reduce design constraints. The high VDS rating is also useful for 400/500 V bus voltage applications. The widely compatible gate drive of ±20 V, 5 V Vth allows all devices to be driven with 0 to 12 V gate voltage. Therefore, it can be interoperated with existing SiC MOSFET, Si IGBT and Si MOSFET gate drivers.

“The four products announced today will help solve challenges faced by engineers working in demanding voltage and power applications, from DC/DC converters and onboard chargers to power factor correction and solar inverters,” said Anup Bhalla, vice president of engineering at UnitedSiC.

Available in TO247-3L packages, the △UJ4C075018K3S, △UJ4C075018K4S with RDS(on) of 18mΩ at 25°C and the △UJ4C075060K3S, △UJ4C075060K4S with on-resistance of 60mΩ are currently available for purchase through official distributors.