Supports interface conversion, etc. with CXL controller
Development of optimized controller and software technology
Expanding collaboration with global data center customers


With the recent expansion of AI and big data applications, the amount of data to be processed is exponentially increasing. However, the DDR interface used in current data centers and server platforms has limitations in the DRAM capacity that can be installed in the system.

Samsung Electronics announced on the 11th that it has developed DRAM memory technology based on the next-generation interface, Compute Express Link (CXL). Samsung's CXL-based DRAM memory has been verified on the Intel platform. Samsung Electronics stated that the commercialization schedule for the new technology will be determined flexibly depending on market conditions.

CXL is an interface proposed to more efficiently utilize accelerators, memory, and storage devices used with CPUs in high-performance computing systems. It can overcome the physical limitations of the memory capacity of existing computing systems and expand the capacity of DRAM.

Samsung Electronics applied the EDSFF (Enterprise & Data Center SSD Form Factor) form factor, which is used in large-capacity SSDs, to CXL DRAM. CXL DRAM coexists with the main DRAM of existing systems while expanding system memory capacity to TB (terabytes).

While existing DRAM controllers only acted as simple buffers to temporarily store data, the CXL DRAM controller supports 'Memory Mapping' and 'Interface Converting' technologies that allow computing systems to use main memory DDR DRAM and CXL DRAM with different interfaces together, and 'Error Management' that minimizes system errors and increases data reliability.