Infineon Unveils Module for Electric Vehicle Traction Inverters
Adoption of SiC trench MOSFETs increases cell density
Compliant with AQG324 automotive power module standard


Infineon Technologies announced on the 11th that it will begin supplying new automotive power modules using CoolSiC™ MOSFET technology in June.

The 1200V full-bridge module, "HybridPACK™ Drive CoolSiC™," is optimized for electric vehicle (EV) traction inverters and is suitable for applications requiring high power density and high performance. For vehicles with 800V battery systems or larger, it delivers higher inverter efficiency, extending driving range and reducing battery costs.

Infineon's proprietary SiC trench MOSFET structure, adopted by the new CoolSiC products, enables higher cell density compared to planar structures and operates with lower gate oxide field strengths, thereby enhancing reliability.

Customers can easily migrate from Si to SiC with the new power modules in the same footprint. This enables inverter designs to achieve up to 250 kW higher power in the 1200 V class, increasing driving range, miniaturizing batteries, and optimizing system size and cost.

Infineon offers two versions, 1200V/400A and 1200V/200A DC, with different chip counts.

Additionally, Infineon's automotive CoolSiC MOSFETs, which meet the AQG324 standard for automotive power modules, are designed and qualified to achieve short-circuit robustness and high cosmic ray and gate oxide robustness.