M6 MRH25N12U3 Radiation Tolerant MOSFET
Withstanding extreme space environments and increasing power circuit reliability


Power supplies for space applications require enhanced radiation technology to overcome extreme particle interactions and solar and electromagnetic activity. Microchip announced today the M6 MRH25N12U3, a 250V, 0.21Ω on-resistance, radiation-hardened MOSFET that has been qualified for commercial aerospace and space defense applications.

The M6 MRH25N12U3 MOSFET can be used in point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. It can withstand harsh space environments, extends the reliability of power circuits, and meets all requirements of MIL-PRF19500/746 with improved performance. It has also completed the Defense Logistics Agency (DLA) review and qualification test, which is a U.S. military supply chain procurement condition. JANSR2N7593U3 certification is expected to be obtained within this month.

The device is designed for future satellite system designs and also serves as a replacement for existing systems. It can withstand total ionizing doses (TID) of 100 krad (kilorad) and 300 krad, and can also withstand single event effects (SEU) with a linear energy transfer (LET) of 87 MeV/mg/cm2. Verification testing also ensures 100% wafer lot radiation intensity.