Microchip, 1700V MOSFET die, discrete,
Transport systems with SiC portfolio including power modules
Expanding efficiency and power density options for developers


Today, the electric charging systems that power commercial vehicles, auxiliary power systems, solar inverters, semiconductor transformers, and other transportation and industrial applications all rely on high-voltage switching power devices. Microchip today expanded its silicon carbide (SiC) portfolio with the release of 1700V SiC MOSFET dies, discretes, and power modules.

Microchip's 1700V SiC technology offers an alternative to silicon (Si) IGBTs. In the past, developers were forced to sacrifice performance and use complex topologies due to switching frequency limitations stemming from losses in Si IGBTs. Furthermore, as transformers increased the size and weight of power electronics systems, switching frequencies were increased to reduce this.

The new SiC product family, which replaces IGBTs, reduces component count, improves efficiency, and enables a two-level topology with simplified control. Furthermore, by reducing the size and weight of power conversion devices without switching limitations, it frees up space for more charging stations and additional space for paying passengers and cargo at lower system costs. This extends the range and operating time of heavy-duty vehicles, electric buses and other battery-powered commercial vehicles.

“Transportation system developers must meet the ongoing demand to carry more people and goods, even as vehicle sizes become increasingly challenging,” said Leon Gross, vice president of Microchip’s Discrete Products business unit. “The best way to achieve this is through high-voltage SiC power devices and highly efficient power conversion.”

This product family features gate oxide stability, demonstrating no change in threshold voltage even after 100,000 cycles of repetitive UIS (R-UIS) testing. Furthermore, the R-UIS tests demonstrated excellent avalanche robustness and parametric stability, and gate oxide stability ensured stable operation over the system lifetime.

The body diode exhibits no performance degradation, and the SiC MOSFET eliminates the need for an external diode. Its short-circuit tolerance is comparable to that of an IGBT and can withstand harmful electrical transients. Its flatter RDS(on) curve across a junction temperature range of 0 to 175°C ensures more stable power system operation than other temperature-sensitive SiC MOSFETs.

Microchip simplifies the adoption of Microchip technology with its AgileSwitch® family of digital programmable gate drivers, available in standard and customized formats, and a wide range of discrete and power module packaging options. These gate drivers accelerate SiC development from benchtop to production.

Microchip's other SiC products include a family of MOSFETs available as bare die and in a variety of discrete and power module packages, as well as 700V and 1200V Schottky barrier diodes. Microchip integrates in-house SiC die production with low-inductance power packaging and digital programmable gate drivers, enabling developers to create smaller, more efficient and more reliable end products.

Microchip's SiC SPICE simulation models, compatible with the MPLAB® Mindi™ analog simulator, provide system developers with resources to simulate switching performance before hardware design. The Intelligent Configuration Tool (ICT) helps model efficient SiC gate driver configurations for Microchip's AgileSwitch digital programmable gate drive family.