ST, based on Norstel's SiC ingot growth technology
First 8-inch SiC bulk wafers produced in Sweden
Plans to produce 40% of our consumption in-house by 2024


STMicroelectronics announced on the 9th that it has produced prototype 200mm (8-inch) silicon carbide (SiC) bulk wafers at its facility in Norrköping, Sweden, which have reduced defect rates by minimizing crystal dislocation defects.

The low wafer defect rate was achieved based on the expertise of SiC ingot growth technology developed by STMicroelectronics Silicon Carbide, formerly Norstel, which ST acquired in 2019.

The transition to 200mm SiC wafers requires the development of a comprehensive support ecosystem, including equipment suppliers, to address quality issues. ST is developing its own 200mm SiC manufacturing equipment and process technology in collaboration with multiple technology partners across the entire supply chain.

ST is currently producing STPOWER SiC products in volume on two 150mm wafer lines at its Catania, Italy, and Ang Mo Kio, Singapore, fabs, with assembly and testing taking place at its back-end facility in Shenzhen, China. ST plans to build a new SiC wafer facility and procure more than 40% of its SiC wafers internally by 2024.

SiC is a compound semiconductor material that offers higher performance and efficiency than silicon (Si) in power applications. ST's 25 years of R&D have resulted in over 70 patents. A 200mm wafer can produce integrated circuits with nearly twice the usable area of a 150mm wafer, providing 1.8 to 1.9 times more working chips.