Infineon Technologies (Korea CEO Seung-soo Lee) is expected to release new power semiconductor products optimized for high switching frequency applications such as telecom and solar power, which will reduce switching losses and minimize the need for component paralleling.

Infineon Technologies (Korea CEO Seung-Soo Lee) announced on the 23rd that it is launching OptiMOS™ 6 100V products using new power MOSFET technology.

The new technology is optimized for high switching frequency applications such as telecom and solar where losses occur due to charge (switching) and on-state resistance (conduction).

It also offers best-in-class RDS(on) and wider SOA (safe operating interval), making it ideal for battery-powered applications (BPAs) and battery management systems (BMS).

The OptiMOS 6 100V family, featuring a new design concept, offers improved RDS(on) and industry-leading figure of merit (FOM).

Combining very low on-state resistance with excellent switching performance, OptiMOS 6 facilitates thermal design and reduces paralleling, resulting in superior efficiency, improved power density, reduced system cost, and extended lifetime.

Specifically in the telecom market, OptiMOS 6 offers 18% lower RDS(on) and over 30% improved FOM(It sets a new industry standard by achieving RDS (on) x Qg and Qgd).

Using OptiMOS 6 in SuperSO8 package (2.2 mΩ) in a 600 W-(36∼60) V to 12 V ZVS buck-boost converter achieves 1% higher efficiency across the entire load range than OptiMOS 5 BSC027N10NS5 (2.7 mΩ).

The result is improved charge and RDS(on) that reduces power loss by 7W and enables up to 15% higher power density.

Above all, these new 100V products reduce conduction and switching losses and minimize the need for component paralleling.