Up to 20% improvement in key MOSFET performance compared to previous generations, while maintaining quality and reliability.
Up to 10% reduction in power loss compared to previous generations when used in electric vehicle DC rapid chargers.

Infineon Technologies (hereafter Infineon) is launching SiC-based MOSFET technology that improves key MOSFET performance, such as stored energy and charge, by up to 20% compared to previous generations while maintaining quality and reliability.

Infineon announced on the 11th that it is launching the second generation of CoolSiC™ MOSFETs, a next-generation silicon carbide (SiC) MOSFET trench technology that can increase energy efficiency and contribute to decarbonization.

CoolSiC MOSFET 2nd generation (G2) technology leverages the unique performance advantages of silicon carbide to reduce energy losses and achieve higher efficiency in power conversion, making it suitable for a wide range of power semiconductor applications, including solar, energy storage, DC EV charging, motor drives, and industrial power supplies.

Using CoolSiC G2 in electric vehicle DC fast chargers can reduce power loss by up to 10% compared to previous generations, enabling increased charging capacity without increasing the form factor.

Adopting CoolSiC G2 devices in traction inverters can increase the driving range of electric vehicles and can be used in solar inverters in the renewable energy sector. Adopting CoolSiC G2 enables downsizing while maintaining high power output, resulting in lower cost per watt.

Infineon's leading CoolSiC MOSFET trench technology, which enables high-performance CoolSiC G2 solutions, delivers higher efficiency and reliability compared to conventional SiC MOSFET technologies through optimized design.

Additionally, the combination of XT packaging technology enables higher thermal conductivity, better assembly management, and improved performance.

Infineon supplies silicon, SiC, and GaN, meeting designers' expectations and needs with design flexibility and advanced application expertise.

Innovative semiconductors based on wide bandgap (WBG) materials such as SiC and GaN contribute to decarbonization by enabling efficient use of energy.