STMicroelectronics (ST), a global semiconductor company, has set out in earnest to simplify low-voltage GaN designs and support the development of high-performance power systems.

ST has launched the new STDRIVEG210 and STDRIVEG211 half-bridge GaN (Gallium Nitride) gate drivers optimized for industrial and telecommunications power conversion applications.

STDRIVEG210 and STDRIVEG211 support rail voltages up to 220V and have built-in linear regulators to generate high-side and low-side 6V gate signals.

It enables control optimization through separate sink and source paths and is suitable for both resonant and hard-switching topologies.

In particular, the STDRIVEG210 is suitable for various power conversion applications such as server and communication power supplies, battery chargers, solar micro-inverters, LED lighting, and USB-C power sources, and minimizes wake-up time during intermittent operation with a fast startup time of 300ns.

The STDRIVEG211 features overcurrent detection and smart shutdown functions, making it suitable for high-reliability applications such as power tools, electric bicycles, pumps, servo motor drives, and Class D audio amplifiers.

It also provides high-side UVLO protection, ensuring stability in motor-driven environments. raised.

Both products integrate bootstrap diodes to easily power the high-side driver and minimize the Bill of Materials (BOM). The gate drive paths are separated to support 2.4A sink current and 1A sourcing current, enabling fast switching and dV/dt adjustment.

In addition, it is equipped with various protection functions, including cross-conduction prevention interlocking, a short propagation delay of 10ns matching time, undervoltage cutoff (UVLO), overheating protection, and ±200V/ns dV/dt immunity. With an input voltage tolerance of up to 20V, controller interface circuit design is also simplified.

STDRIVEG210 and STDRIVEG211 are available in small 18-lead QFN packages measuring 5mm x 4mm and are currently in mass production. The price is set at $1.22 per unit based on a 1,000-unit order.