Applied Materials announced two deposition machines targeting gate-all-around (GAA) processes of 2 nanometers or smaller. The machines unveiled are the Precision Selective Nitride PECVD and Endura Trillium ALD, and the company explained that both machines are used to form the microstructures of GAA transistors.

The equipment announced on April 14 focuses on two processes: insulation structure protection and metal gate formation. According to the company, Precision Selective Nitride PECVD forms silicon nitride films only where necessary to protect the STI structure that isolates adjacent transistors. The purpose is to reduce insulation film damage in subsequent processes, thereby lowering parasitic capacitance and leakage.

Endura Trillium ALD is applied to the formation of metal gate stacks that wrap silicon nanosheets. It is designed to integrate multiple metal deposition steps into a single platform to precisely stack metal layers within complex GAA structures, with a focus on increasing the process flexibility required for transistor threshold voltage regulation.

This announcement is interpreted as targeting the microstructure control technology required for sub-2nm processes, amidst growing demand for high-performance and high-efficiency logic chips driven by the spread of AI computing. The company stated that both pieces of equipment are being applied to the sub-2nm GAA processes of leading logic chip manufacturers.