ROHM Develops 5th Generation SiC MOSFET
Published2026.04.30 08:43
ROHM announced that it has developed a fifth-generation silicon carbide (SiC) MOSFET with reduced ON resistance under high-temperature operating conditions. The company explained that it aims to apply this technology to automotive electric powertrains and industrial power supplies by reducing losses compared to previous generations.
This product is a power semiconductor developed by ROHM targeting high-power applications such as automotive electric systems, AI servers, and data center power supplies. It aims to improve performance in high-temperature environments through device structure improvements and manufacturing process optimization, and will be provided sequentially in bare chip, discrete, and module forms in the future.
ROHM announced that its 5th generation SiC MOSFET reduced the ON resistance at a junction temperature (Tj) of 175°C by approximately 30% compared to the existing 4th generation product. This is a comparison result based on products with the same voltage rating and chip size.
The company stated that these characteristics could contribute to unit miniaturization and output improvement in applications such as traction inverters for xEVs used in high-temperature environments. However, it did not mention specific performance figures at the system level or the extent of efficiency improvement.
The 5th generation SiC MOSFET began providing bare-chip samples in 2025, and development was completed as of March 2026. ROHM announced that it plans to begin providing samples of discrete and module products incorporating the device starting in July 2026.
In addition, the company explained that it will strengthen support for application design by expanding its lineup by voltage rating and package type, and by providing design tools. This is explained as a measure to broaden the scope of application in automotive and industrial power supply design.
ROHM stated that power density in high-performance servers and data centers is increasing due to the spread of generative AI and the growth of large-scale data processing. As a result, reducing losses during the energy conversion process is emerging as a major challenge, and the company explained that the adoption of SiC power semiconductors is expanding.
The company suggested traction inverters for xEVs, on-board chargers (OBCs), DC-DC converters, power supplies for AI servers and data centers, photovoltaic (PV) inverters, energy storage systems (ESS), and uninterruptible power supplies (UPS) as key applications for the 5th generation SiC MOSFET.
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